Limits in detecting an individual dopant atom embedded in a crystal.

نویسندگان

  • Anudha Mittal
  • K Andre Mkhoyan
چکیده

Annular dark field scanning transmission electron microscope (ADF-STEM) images allow detection of individual dopant atoms located on the surface of or inside a crystal. Contrast between intensities of an atomic column containing a dopant atom and a pure atomic column in ADF-STEM image depends strongly on specimen parameters and microscope conditions. Analysis of multislice-based simulations of ADF-STEM images of crystals doped with one substitutional dopant atom for a wide range of crystal thicknesses, types and locations of dopant atom inside the crystal, and crystals with different atoms reveal some interesting trends and non-intuitive behaviours in visibility of the dopant atom. The results provide practical guidelines to determine the optimal microscope and specimen conditions to detect a dopant atom in experiment, obtain information about the 3-d location of a dopant atom, and recognize cases where detecting a single dopant atom is not possible.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Numerical Calculation of Resonant Frequencies and Modes of a Three-Atom Photonic Molecule and a Photonic Crystal in an External Cavity

In the present paper, resonant frequencies and modes of a three-atom photonic molecule and a photonic crystal placed within a cavity are numerically calculated. First, governing formulation in transverse electric field mode (TE) is obtained using Maxwell equations. Then, an algorithm based on a finite difference scheme and matrix algebra is presented. The algorithm is then implemented in a comp...

متن کامل

Spontaneous Emission Spectrum from a Driven Three-Level Atom in a Double-Band Photonic Crystal

Abstract The spontaneous emission spectrum from a driven three-level atom placed inside a double-band photonic crystal has been investigated. We use the model which assumes the upper levels of the atomic transition are coupled via a classical driving field. The transition from one of the upper levels to lower level couples to the modes of the modified reservoir, and the transition from the oth...

متن کامل

Mechanical Characteristics and Failure Mechanism of Nano-Single Crystal Aluminum Based on Molecular Dynamics Simulations: Strain Rate and Temperature Effects

Besides experimental methods, numerical simulations bring benefits and great opportunities to characterize and predict mechanical behaviors of materials especially at nanoscale. In this study, a nano-single crystal aluminum (Al) as a typical face centered cubic (FCC) metal was modeled based on molecular dynamics (MD) method and by applying tensile and compressive strain loadings its mechanical ...

متن کامل

High-resolution spectroscopy and the analysis of ro-vibrational transitions of molecules in solid parahydrogen

Solid parahydrogen provides a novel matrix for isolation spectroscopy of atoms and molecules. Ro-vibrational motion of molecules embedded in solid parahydrogen is well quantized on account of the weak interactions in the crystal and of the softness of the crystal being characteristic of quantum crystals. Most of the observed spectral linewidths are one or two orders of magnitude sharper than th...

متن کامل

An experimental and theoretical study on the physical properties of Al doped ZnO thin films

In this research, ZnO thin films with Al impurity as dopant were coated onto cleaned glass substrates by the spray pyrolysis technique. Crystal structure of the thin films was studied via XRD, and UV-vis spectroscopy was carried out to investigate their optical properties. Finally, in order to study the effect of Al impurity in ZnO thin films, the band structures of both pure and doped systems ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Ultramicroscopy

دوره 111 8  شماره 

صفحات  -

تاریخ انتشار 2011